Workshop on temperature measurement of semiconductor wafers using thermocouples

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U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology , Gaithersburg, MD
Thermocouples -- Industrial applications -- Congresses., Semiconductor wafers -- Thermal properties -- Measurement -- Congre
About the Edition

Presentation materials from the satellite workshop held at NIST, September 19, 2000 in collaboration with the 8th International Conference on Advanced Thermal Processing of Semiconductors-- RTP"2000 outlining how to use thermocouples for measurements of temperature in semiconductor processing and how to achieve the highest accuracy.

StatementK.G. Kreider ... [et al., editors].
GenreCongresses.
SeriesNISTIR -- 6566.
ContributionsKreider, Kenneth G., National Institute of Standards and Technology (U.S.)
The Physical Object
FormatMicroform
Pagination1 v. (various pagings)
ID Numbers
Open LibraryOL17719772M

Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples. Published. January 1, Author: Kenneth G. Kreider, D P. DeWitt, Benjamin K.

Tsai, B Lojek.

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Presentation materials from the satellite workshop held at NIST, Septem in collaboration with the 8th International Conference on Advanced Thermal Processing of Semiconductors-- RTP' outlining how to use thermocouples for measurements of temperature in semiconductor processing and how to achieve the highest accuracy.

Semiconductor processing temperatures are currently measured using either pyrometers or thermocouples, both of which have significant limitations. Temperature measurements based on the temperature dependance of the Lamb wave velocities in silicon and longitudinal waves through the ambient directly above the wafer are : Y.

Lee, C. Chou, B. Khuri-Yakub, K. Saraswat, M. Moslehi. The thin-film thermocouples were calibrated using proof specimens fabricated with the Si mm wafers and evaluated in the NIST RTP sensor test bed.

The commercial type K thermocouples yielded temperature measurements within 4 °C of the thin-film Rh/Pt and Pt/Pd thermocouples on the mm calibration wafer between °C and ° by: 6.

one cycle in the steady state, the wafer temperature at time t (relative to the flash) and radius r is then described by T w(r,t) = T amb +T(r,t), (1) where T amb is the ambient temperature and T is the temperature elevation of the wafer above ambient.

The temperature elevation may be expanded as T(r,t) = [T ave +T rad(r,t)]e−ct, (2) where T. Thermo Electric Instrumentation B.V.

PO AB Waddinxveen The Netherlands Tel: +31 85 Fax: +31 85 Email: [email protected] Wafer Temperature Control & Measurement In Semiconductor Processes Non-contact Temperature Sensors CI Semi's family of noncontact temperature monitors (the NTM line), offers high end pyrometry products for the measurement of wafer temperatures during process.

International Temperature Scale, ITS, radiant temperature, infrared temperature, thermocouples, liquid-in-glass thermometry, emissivity, Planck’s law, Wien’s law, Stefan–Boltzmann law Contents 1.

Details Workshop on temperature measurement of semiconductor wafers using thermocouples PDF

Introduction The Importance of Temperature Measurements Fundamental Relationships General Philosophy of Temperature. silicon, ingots, are sliced into wafers, ground to a specific thickness (e.g., mm diameter wafers are mm thick) and polished to be smooth.

A thin layer of epitaxial (i.e., single crystal) silicon, or “epi”, is deposited using CVD and the wafer is ready for use in a fabrication facility (commonly called a fab).

All the transistors. The Japan Society of Applied Physics. The Japan Society of Applied Physics (JSAP) serves as an academic interface between science and engineering and an interactive platform for a.

All types of thermocouple show a positive proportionality between the output emf and the rising temperature (except type B, which output voltage exhibits a double-value region to temperatures raising from 0 to 42°C) and have a very large range of working temperature, considering the normal range of measurements for biomedical applications.

The. Enable extemely accurate temperature measurement solutions for the semiconductor industry. Temperature measurement is critical to the efficacy of semiconductor equipment. You require highly accurate and low noise solutions with varying temperature ranges for etching and wafer fab processes.

True Wafer Surface Temperature and Reflectance. The instrumented wafers have sputter deposited thin-film thermocouples to minimize the thermal disturbance of the wafer by the sensors. The National Institute of Standards and Technology (NIST) calibration wafer also employs platinum-palladium wire thermocouples to achive a combined standard uncertainty of C in the temperature measurement of the thin-film thermocouples junction at C.

Relative temperature measurement accuracy of ultrasonic thermometry system as a function of SNR. the fact that the thermocouple reads the temperature at the center whereas the ultrasonic sensor gives the average wafer temperature.

The heat loss is larger near the edge of the wafer resulting a smaller average temperature than the center. loo0. Abstract We have developed an instrumented calibration wafer for radiometric temperature measurements in rapid thermal processing (RTP) tools for semiconductor processing.

The instrumented wafers have sputter deposited thin-film thermocouples to minimize the thermal disturbance of the wafer by the sensors.

The National Institute of Standards and Technology (NIST) calibration wafer. My selection of subjects is based on my personal experiences (or, rather, problems) encountered in temperature measurement and the use of thermocouples. Richard Nute is a product safety consultant engaged in safety design, safety manufacturing, safety certification, safety standards, and forensic investigations.

We report an optical, interferometric technique for measuring the temperature of semiconductor substrates during heating or cooling, which is applicable in vacuum. The technique circumvents many of the problems associated with thermocouple or pyrometer measurements.

A low‐power infrared (IR) laser (e.g., λ=‐μm He–Ne laser) having an energy below the band gap is directed at a wafer. Good agreement between optical and the thermocouple temperature measurements is obtained, with an accuracy and precision of ± °C demonstrated over a 20– °C temperature range for a GaAs sample.

Analysis of the effects of all six rigid‐body motions of the wafer on the measurement. Fig. Temperature measurement using a low calibration power P m Switching times are not instantaneous. During the transition from high to low power levels, electrical measurement therefore gives incorrect temperature values.

Figure 3 shows the temperature measurement using v be (t) of a bipolar transistor under low emitter current as TSEP [30]. Semiconductor Temperature Sensors [] Introduction []. Semiconductor temperature sensors are the devices which come in the form of integrated circuits i.e.

ICs hence, popularly known as IC temperature are the electronic devices manufactured in an identical fashion to present-day electronic semiconductor devices like microprocessors. measurement system, because connecting the thermocouple wires to the measurement system creates additional thermoelectric circuits.

Consider the circuit illustrated in Figure 2, in which a J-type thermocouple is in a candle flame that has a temperature you want to measure.

Description Workshop on temperature measurement of semiconductor wafers using thermocouples FB2

The two thermocouple wires are connected to the copper leads of a DAQ board. Workshop on Temperature Measurement of Semiconductor Wafers Using Thermocouples ( NIST) Gaithersburg, MD: U.S.

Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, [] Description Book — 1 v. (various pagings): ill. ; 28 cm. Summary. A thin-film thermocouple (12) is disclosed for use with a gas turbine component. The thermocouple may be formed on a non-planar substrate (22) having formed thereon an electrically insulating layer (34) capable of maintaining its insulating properties at gas turbine operating temperatures.

A first thermocouple leg (26) made of pure platinum is then deposited on the dielectric layer (34). Temperature Measurement in Rapid Thermal Processing Using the Acoustic Temperature Sensor Yong Jin Lee, Butrus T.

Khuri-Yakub, and Krishna Saraswat Abstract-Acoustic techniques are used to monitor the temper- ature of silicon wafers in rapid thermal processing environments from room temperature to " C with f5" C accuracy.

Acoustic. There was strong interest in measuring temperature on the International Temperature Scale of (ITS), rather than local process scales, and finding ways to trace the measurements in RTP to NIST.

Prior to RTPa workshop was held at NIST on Temperature Measurement of Semiconductor Wafers using Thermocouples, with 58 participants. This paper describes the design, construction, and characterization of a variable‐temperature wafer apparatus for use in the detection of electrically active defects which produce deep levels in the band gap of silicon.

In its present form, the wafer chuck can heat and cool wafers as large as 51 mm in diameter over the temperature range from −° to °C. connecting the thermocouple wires to the measurement system creates additional thermoelectric circuits. Consider the circuit illustrated in Figure 2, in which a J-type thermocouple is in a candle flame that has a temperature you want to measure.

The two thermocouple wires are connected to the copper leads of a DAQ board. Vulcan Electric Profile Thermocouples are high-precision temperature sensor constructions designed and manufactured primarily for the Semiconductor, Solar and LED industries.

These thermocouples were engineered to address the critical process temperature measurement and control required for. Direct temperature measurement of the bare substrate is often used to calibrate the temperature offset between the process control temperature (e.g., thermocouple to control heater PID loops) and real wafer temperature.

GaAs, InP, Si substrates. While both ECP and BET work well for GaAs, InP, and Si substrates, the general. An analysis of the uncertainty, u = K (k =1), of the wafer surface temperature measurements in the NIST RTP test bed is presented.

Confirmation of this value was partially hampered by thermal gradients in the chamber and some problems with the weld pads at high temperature. SWTest Workshop, Wafer Heat Distribution Analysis during Heat measurement using a single thermocouple.

Semiconductor Technologies & Instruments SWTest Workshop, SWTest Workshop, Wafer probed at High Temperature: C Y Coordinates. Semiconductor Technologies & Instruments SWTest Workshop, A.T. Fiory, in Encyclopedia of Materials: Science and Technology, Thermocouples and Physical Sensors.

Thermocouple junctions play useful roles both as contacting temperature probes for processing wafers and as temperature references for sensor calibration. Sensors based on silicon physical measurements are used in some specialty applications.The voltage produced by a thermocouple junction is very small, typically only a few millivolts.

A type K thermocouple changes only about 40V per 1∞C change in temperature; to measure temperature with.1∞C accuracy, the measurement system must be able to measure a 4V change.